1. Z. Remeš, A. Choukourov, J. Stuchlík, J. Potmesil, M. Vanecek
    Nanocrystalline diamond surface functionalization in radio frequency plasma
    Diamond and Related Materials 15 (2006) 745-748.
  2. J. Kočka, T. Mates, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Characterization of grain growth, nature and role of grain boundaries in microcrystalline silicon – review of typical features.
    Thin Solid Films 501 (2006) 107-112.
  3. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Transport properties of microcrystalline silicon prepared at high growth rate.
    Journal of Non-Crystalline Solids 352 (2006) 1097-1100.
  4. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Microcrystalline silicon prepared at magnetic field modified nucleation
    Journal of Non-Crystalline Solids 352 (2006) 901-905.
  5. M. Ledinský, L. Fekete, J. Stuchlík, T. Mates, A. Fejfar, J. Kočka
    Characterization of mixed phase silicon by Raman spectroscopy
    Journal of Non-Crystalline Solids 352 (2006) 1209-1212.
  6. A. Fojtík, J. Valenta, The Ha Stuchlíková, J. Stuchlík, I. Pelant, J. Kočka
    Electroluminescence of silicon nanocrystals in p-i-n diode structures.
    Thin Solid Films 515 (2006) 775-777.
  7. L. Fekete, H. Němec, F. Kadlec, P. Kužel, J. Stuchlík, A. Fejfar, J. Kočka
    Carrier dynamics in microcrystalline silicon studied by time-resolved terahertz spectroscopy
    Journal of Non-Crystalline Solids 352 (2006) 2846-2849.
  8. G. Juška, K. Arlauskas, J. Stuchlík, R. Österbacka
    Non-Langevin bimolecular recombination in low-mobility materials.
    Journal of Non-Crystalline Solids 352 (2006) 1167-1171.