Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design Image
GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD Image
InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study Image
Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition Image
