Apparatus for preparation of semiconductor nitride structures AIXTRON 200-4 RF-S

Technological apparatus for the preparation of semiconductor nitride structures using the MOVPE method (epitaxy from organometallic compounds). By combining layers of compound semiconductors GaN, AlN, InN and their ternary mixtures, by doping them differently and by changing the growth parameters, a diverse range of semiconductor heterostructures with various application possibilities can be prepared. This apparatus with a horizontal reactor enables the preparation of high-quality aluminium and boron nitride crystals at temperatures up to 1350 °C.