Epitaxial strained thin films of (SrTiO3)n-1(BaTiO3)1SrO were grown on DyScO3 substrates using molecular beam epitaxy. The best microwave dielectric properties were discovered in samples with n= 6. Permittivity exhibits huge tuning using electric field and microwave dielectric loss is anomalously low. Unique properties were confirmed using first-principles calculations and by experimental observation of the soft mode behavior in THz region. These films are ideal for components in 5G networks.
Contact person: Stanislav Kamba
Collaborating institutions: Prof. D.G. Schlom from the Cornell University and other American and German institutions.