Growth of nitride-based heterostructures for advanced scintillators and HEMTs and their characterization by optical and transport methods (in the frame of project OP-PK LABONIT)

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Description

MOVPE apparatus AIXTRON – CCS3´2 for the growth of nitride-based heterostructures.

Semiconductor nitride-based heterostructures intended for advanced scintillators and high electron mobility transistors (HEMT) are prepared using metal-organic vapour phase epitaxy (MOVPE) technique. Optimization of both types of structures cannot do without close feedback between technology and characterization. As-grown structures are thus as soon as possible tested by means of optical (Raman, photoluminescence, cathodoluminescence) and transport (conductivity, Hall, C-V profiles) methods.

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