Development of thick luminescent heterostructures with many InGaN / GaN quantum wells

The luminescence properties of scintillation nanoheterostructures with super fast subnanosecond luminescence response to ionizing radiation prepared on the basis of nitride semiconductors by the organometallic epitaxy method in the MOVPE group are studied in the luminescence laboratory.

Theme is contributed to by

Ing. Jiří Oswald, CSc.

Phone:

+420 220 318 583

Ing. František Hájek, Ph.D.

Phone:

+420 220 318 410

Ing. Otto Petříček

Phone:

+420 220 318 409

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(upper left) Scanning electron microscopy image (top view) of a thick porous diamond layer; (upper centre) Scanning electron microscopy image of an heavily boron-doped epitaxial diamond layer deposited on a Ib high-pressure high-temperature diamond substrate; (upper right) Optical emission spectrum of a hydrogen, methane and phosphine plasma (inset) Scanning electron image of a nanocrystalline diamond coated titanium mesh; (bottom left) Picture of a 6-inch quartz wafer coated with boron-doped diamond; (bot

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