Publications

In the list of publications, you will find the complete output of our researchers since 1961.

  1. P. Kolář, FZU), J. Fischer, FZU)
    Dispersion relations in differential form
    Proc.of the IX Blois Workshop on Elastic and Diffractive Scattering, Pruhonice, Prague, Czech Republic, June 9 - 15, 2001, V. Kundrát, P. Závada (Editors), Institute of Physics AS CR, Prague, Czech Republic, page 305 - 312
  2. P. Ripka, L. Kraus
    Magnetoimpedance and magnetoinductance
    Magnetic Sensors and Magnetometers, p. 349-367, ed. Pavel Ripka, Boston, Artech House Publishers, Norwood (England), 2001, ISBN I-58053-057-5.
  3. J. Bydžovský, M. Kollár, P. Švec, L. Kraus, V. Jančárik
    Magnetoelastic properties of CoFeCrSiB amorphous ribbons - a possibility of their application
    Journal of Electrical Engineering 52 (2001) 205-209.
  4. M. Hauser, L. Kraus, P. Ripka
    Giant magnetoimpedance sensors
    IEEE Instrumentation & Measurement Magazine 4 (2001) 28-32.
  5. L. Kraus, O. Chayka, J. Touš, F. Fendrych, K. R. Pirota, M. Šícha, L. Jastrabík
    Magnetoresistance of Fe–Ta–O films prepared by RF plasma jet method
    Journal of Magnetism and Magnetic Materials 226-230 (2001) 669-670.
  6. K. R. Pirota, L. Kraus, H. Chiriac, M. Knobel
    Magnetostriction and GMI in Joule-heated CoFeSiB glass-covered microwires
    Journal of Magnetism and Magnetic Materials 226-230 (2001) 730-732.
  7. N.V. Mushnikov, A. Andreev, T. Goto, V. Sechovský
    Influence of the Inhomogeneous Distribution of Components on Itinerant 5f-electron Metamagnetism in UCoAl under High Pressures
    Philosophical Magazine B 81 (2001) 569-581.
  8. Y. Iwamoto, K. Ueda, T. Kohara, A. Andreev, L. Havela, V. Sechovský
    Microscopic Measurements on the Band 5f-metamagnetism in UCoAl
    Journal of Magnetism and Magnetic Materials 234 (2001) 207-212.
  9. A. Andreev, M. Diviš, P. Javorský, K. Prokeš, V. Sechovský, J. Kuneš, Y. Shiokawa
    Electronic structure and magnetism in UPtAl
    Physical Review B 64 (2001) 144408(1)-144408(8).
  10. F. Honda, G. Oomi, P. Svoboda, A. Syshchenko, V. Sechovský, S. Khmelevski, M. Diviš, A. Andreev, N. Takeshita, N. Mori, A.A. Menovsky
    Magnetic Phase Diagram of UNi2Si2 under Magnetic Field and High Pressure
    Journal of Magnetism and Magnetic Materials 226-230 (2001) 585-587.
  11. A. Andreev, V. Sechovský, M. Kosaka, Y. Uwatoko, Y. Homma, Y. Shiokawa
    Interplay Between Non-magnetic Dilution and Pressure Effects in Magnetism of UCoAl
    Journal of Magnetism and Magnetic Materials 226-230 (2001) 967-969.
  12. A.V. Kolomiets, M.I. Bartashevich, A. Andreev, L. Havela, T. Goto, W. Iwasieczko
    High-field Magnetization of UNiAl Hydrides
    Physica B: Condensed Matter 294-295 (2001) 249-252.
  13. A. Andreev, V. Sechovský, P. Javorský, M.I. Bartashevich, T. Goto, Y. Homma, Y. Shiokawa, D. Rafaja
    Magnetic properties of U1-xLuxNiGa solid solutions
    Journal of Alloys and Compounds 319 (2001) 29-33.
  14. P. Javorský, V. Sechovský, J. Schweizer, F. Bourdarot, E. Lelievre-Berna, A. Andreev, Y. Shiokawa
    Magnetization Densities in UCoAl Studied by Polarized Neutron Diffraction
    Physical Review B 63 (2001) 064423(1)-064423(8).
  15. A. Andreev, J. Kamarád, F. Honda, G. Oomi, V. Sechovský, Y. Shiokawa
    Magnetoelasticity of UPtAl
    Journal of Alloys and Compounds 314 (2001) 51-55.
  16. L. Havela, M. Diviš, V. Sechovský, A. Andreev, F. Honda, G. Oomi, Y. Meresse, S. Heathman
    U Ternaries with ZrNiAl Structure - Lattice Properties
    Journal of Alloys and Compounds 322 (2001) 7-13.
  17. F. Honda, V. Sechovský, G. Oomi, A. Andreev, A. A. Menovsky
    Magnetovolume effects and the p-T magnetic phase diagram of UNi2Si2
    Physical Review B 64 (2001) 184417-1-184417-5.
  18. J. Hlinka, I. Gregora, A. Plecenik, P. Kúš, L. Satrapinsky, Š. Beňačka
    Phonons in MgB.2. by polarized Raman scattering on single crystals
    Physical Review B 64 (2001) 140503(1)-140503(3).
  19. I. Pelant, P. Fojtik, K. Luterova, J. Kočka, K. Knížek, J. Stepanek
    Room temperature electric field induced crystallization of wide band gap hydrogenated amorphous silicon
    Thin Solid Films 383 (2001) 101-103.