Structures for Fast, Energy-Efficient and Logic electronics based on GaN (FEELGaN) (FEELGaN)

GaN based electronics is newly developing semiconductor field for high-frequency and highpower applications such as 5G and 6G communication networks, charging stations, data centers and power saving electronics. The expected results of proposed project promise important improvement of GaN-based HEMT technology. Frequency properties and electron mobility will be improved by newly suggested V-pit morphology of AlGaN/GaN interface. Reliability and electron channel properties of e-HEMT structures will be improved by replacing Mg doped capping by more reliable alternatives such as InGaN capping. The most important part of the project is development of new concept of complementary HEMT structures based on InGaN capping. Function of this devices is based on two conduction channels formed by 2DEG and 2DHG which can be complementary switched on and off by applied voltage (similary to CMOS structures. This device has potential to help GaN electrons enter into the logic circuits applications and high-capacity data storage.