Abstract
To push the scintillating materials performance towards theoretical limits, the processes of charge transfer and trapping, the role of structural defects, technology-enable bandgap and structure modification should be clearly understood. These key phenomena will be addressed at atomistic level in novel ultrafast nanoscintillators, namely InGaN/GaN multiple quantum well (MQW), ZnO and CsPbBr3 nanostructures, perspective for the time-of-flight techniques, e.g. in medical imaging. Correlated experiments of continuous wave and pulse EPR as well as ENDOR, and especially newly installed electrically detected magnetic resonance technique (EDMR, unique in Czechia) together with thermoluminescence and advanced optical and scintillation spectroscopies will be used. Structural defects, intrinsic and impurity-related localized charge traps nature and their influence on scintillation response and efficiency, further affected by dopants distribution, will be clarified. Complex data analysis will allow to predict the materials performance improvement up to the intrinsic limits.