200 W Nd-ceramic split disk laser for semiconductor annealing

The aim of the project is to develop a working laser for semiconductors annealing delivering high-energy nanosecond pulses in the infrared (1064 nm), visible (532 nm) and ultraviolet (355 nm). The laser with a pulse energy of 10 J and a repetition rate of 10 Hz, developed by the Korean partners, will provide a beam for the conversion module generating beams of shorter wavelength with pulse energies up to 5 J for the 532 nm beam and up to 3 J for the 355 nm beam. The conversion module will be based on an optical scheme in which components with a high damage threshold will be selected. Mechanical design will determine the layout of the components, including their stable mounting, and module’s housing. The integration with the laser will include the control and safety system.