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Graphene layers epitaxially grown on SiC substrate were irradiated by 21.2-nm laser radiation generated at the PALS facility. Irradiation conditions were found when the graphene layer is kept untouched and decouples from the SiC surface. The detachment of graphene layers from the substrate can improve their electrical properties. Threshold fluences of participating processes were obtained by an advanced method of ablation imprints and compared with those calculated by the hybrid code XTANT.
Description
An energy of the soft-x-ray laser pulse is transmitted through the transparent graphene layer and is deposited primarily into the SiC substrate. In the case of a high fluence, SiC amorphizes and expands. Instead of observation of a typical ablation imprint it creates a hillock of 5-nm height. The graphene layer on the hillock is disrupted. However, in the case of a lower fluence (here at the edge of the irradiated area) the graphene layer is kept untouched and decouples from the SiC surface.
Contact person: RNDr. Vojtěch Vozda, Ph.D.
Collaborating institutions:
Charles University, Institute of Physics
Institute of Plasma Physics of the CAS
CEITEC in Brno