Charge transport in microcrystalline Si- the specific features.
Sol. Energ. Mat. Sol. C. 66 (2001) 61 - 71
Transport Anisotropy in Microcrystalline Silicon Studied by Measurement of Ambipolar Diffusion Length.
J. Appl. Phys. 89 (2001) 1800 - 1805
Microcrystalline Silicon - Relation between Transport and Microstructure.
Solid State Phenom. 80-81 (2001) 213 - 224
A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers.
Philos. Mag. Lett. 81 (2001) 405 - 410
Detection of bottom depletion layer and its influence on surface photovoltage measurement in uc-Si:H.
Thin Solid Films 383 (2001) 271 - 273
J. Valenta, J. Dian, K. Luterová, I. Pelant, J. Buršík, D. Nižňanský
Electroluminescence from Sol-Gel Derived Film of CdS Nanocrystals.
phys. status solidi a 184 (2001) R1 - R3
Carrier diffusion in microcrystalline silicon studied by picosecond laser induced grating technique.
Appl. Phys. Lett. 79 (2001) 626 - 628
Amorphous/microcrystalline silicon superlattices - the chance to control isotropy and other transport properties.
Appl. Phys. Lett. 79 (2001) 2540 - 2542
Determination of Density of Localized States in a-Si:H from the Time Relaxation of Space-Charge-Limited Conductivity.
phys. status solidi a 187 (2001) 487 - 491
Features of Charge Carrier Transport in uc-Si:H/a-Si:H Superlattices.
in: Ultrafast Phenomena in Semiconductors, Materials Science Forum, Trans. Tech. Publ. 2001, p. 301-304, 2001, pp.
J. Mikulskas, R. Šulcas, E. Vanagas, R. Tomašiunas, K. Luterová, I. Pelant, J. -L. Rehspringer, R. Lévy
Si+ and Ge+ ion implanted SiO2 matrices: Photoluminiscence pecularities.
Lithuanian J. Phys. 41 (2001) 399 - 403
G. Juška, N. Nekrašas, I. Stuchlík, K. Arlauskas, M. Viliunas, J. Kočka
Features of Charge Carrier Transport in uc-Si:H/a-Si: Superlattices.
Mater. Sci. Forum 384-385 (2001) 301 - 304
Thin Solid Films 383 (2001) 101-103.