Results | FZU

Department of Spintronics and Nanoelectronics

Hall effect in an antiferromagnet

Figure Top row: Left - Hall current in an external magnetic field applied to crystal comprising non-magnetic atoms. Middle – Hall current in a ferromagnet, the blue symbol marks unwanted ferromagnetic stray field. Right – Hall current in a crystal comprising antiferromagnetic and non-magnetic atoms. Middle row: Left - Ordinary Ohm’s current in a crystal comprising only non-magnetic atoms. Right – Same as left in a crystal comprising only antiferromagnetic atoms. Bottom row is a replica of the top row with h

Antiferromagnetic artificial neurons responding to femtosecond-laser pulses

Schematics and an antiferromagnetic crystal on a background with laser beams.

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

Relativistická spintronika

Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn₃Sn

Antiferromagnetic domain imaging

Terahertz electrical writing speed in an antiferromagnetic memory

Terahertz electrical writing speed in an antiferromagnetic memory

Enhanced Extraction of Silicon-Vacancy Centers Light Emission Using Bottom-Up Engineered Polycrystalline Diamond Photonic Crystal Slabs

New principle of magnetic recording

Nový princip magnetického záznamu

Detection of Electrically Modulated Inverse Spin Hall Effect in an Fe/GaAs

Detekce elektricky modulovaného inverzniho spinového Hallova jevu v Fe/GaAs heterostrukturách

Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

Narušení směrové symetrie ve feromagnetických polovodičích (Ga,Mn)As a (Ga,Mn)(As,P) vysvětleno detekcí vrstevných chyb

New antiferromagnetic spintronic device

Nové antiferomagnetické spintronické součástky

Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

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