Spintronic memories combine non-volatility with speed and are expected to complement conventional microelectronics as universal energy-efficient memories beyond the International Technology Roadmap of Semiconductors. The aim of the TERANEU project is to scientifically underpin the future development of spintronic computer memories with speeds extended from the gigahertz to the terahertz range and the operation extended from the digital to the neuromorphic mode. The enabling materials are antiferromagnets and the research plan spans from the fundamental exploration of topological phenomena and dynamics in these complex magnets to imaging of magnetic textures and designing artificial neural networks for realistic internet of things applications. The project builds on our recent discovery of electrical switching of an antiferromagnet by a relativistic spintronic effect, demonstration of a proof-of-concept antiferromagnetic memory with analogue characteristics compatible with common microelectronics, and initial experimental verification of writing by picosecond electrical-current pulses.
