Results | FZU

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

GaN lattice structure with Ga vacancy

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

Diffusive propagation of nervous signals and their quantum control

Diffusion in neuron

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

pssB 255 2018 1700464

Photoluminescence in pulsed-laser deposited GeGaSbS:Er films

GaGaSbS_Er JOsw.png

Generalized master equation for a molecular bridge improved by vertex correction to the Generalized Kadanoff-Baym Ansatz

Nanocrystalline Boron-Doped Diamond as a Corrosion-Resistant Anode for Water Oxidation via Si Photoelectrodes

GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD

Solution-processed Er³⁺-doped As₃S₇ chalcogenide films: optical properties and 1.5 μm photoluminescence activated by thermal treatment

On relativistic transformation of temperature

Non-equilibrium dynamics of open systems and fluctuation-dissipation theorems

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