Abstract
This project aims to address the issues of overheating and premature breakdown in high-power gallium oxide (GaO)-based devices by developing a cutting-edge technology to grow diamond films by chemical vapor deposition (CVD) directly on GaO films protected by engineered interlayers, targeting the GaO/diamond interface with low thermal barrier.
This bilateral project will involve interdisciplinary collaboration between experts in diamond technology and materials science, epitaxial growth of (ultra)wide bandgap semiconductors, device design and fabrication, and advanced electrical testing. Successful completion of this research will result in a developed and manufactured prototype of an advanced power electronic GaO-based rectifying diode with CVD diamond serving as an efficient heat-spreading layer and guard ring-based edge termination for improved electric breakdown. Such technology has a significant disruptive potential for the current power electronic industry and may lead to innovative devices with improved efficiency and reliability available in the future power device market.