Laboratory of Optical Spectroscopy/LABONIT

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition