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Laboratory of Optical Spectroscopy/LABONIT

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Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

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HEMT BB.png

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

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GaN lattice structure with Ga vacancy

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

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Dep14_CrystEngCom_Fig1.png

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

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pssB 255 2018 1700464

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

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Dep14_QD InAs_GaAsSb.png
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