Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design Image
GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD Image
Solution-processed Er3+-doped As3S7 chalcogenide films: optical properties and 1.5 μm photoluminescence activated by thermal treatment Image
InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study Image
Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition Image
