Results | FZU

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

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A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

GaN lattice structure with Ga vacancy

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

pssB 255 2018 1700464

Photoluminescence in pulsed-laser deposited GeGaSbS:Er films

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GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD

Solution-processed Er³⁺-doped As₃S₇ chalcogenide films: optical properties and 1.5 μm photoluminescence activated by thermal treatment

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Photocurrent spectra of semi-insulating GaAs M–S–M diodes: Role of the contacts

Photocurrent spectrum in SI GaAs

InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

Multiplexní InGaN/GaN kvantové jámy pro rychlé scintilátory: studium radioluminiscence a fotoluminiscence

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

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Record wavelength emitted from InAs/GaAs quantum dots

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