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  1. Home
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  4. Division of Solid State Physics
  5. Department of Semiconductors
  6. Laboratory of Luminescence
  7. Patents

Laboratory of Luminescence

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  1. A. Hospodková, F. Dominec
    GaN based epitaxial multilayer structure for high electron mobility transistors and transistor containing this structure
  2. A. Hospodková, J. Pangrác, J. Oswald
    Gallium arsenide antimonite layer with graded composition for reducing strain in indium arsenide/gallium arsenide quantum dots
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