Periodic surface functional group density on graphene via laser-induced substrate patterning at Si/SiO2 interface

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Controlling the spatial distribution of functional groups on 2D materials is crucial to explore their anisotropic and (opto)electronic properties. This work performed in close collaboration with J. Heyrovsky Institute of Physical Chemistry of the Czech Academy of Sciences and Center for Physical Sciences and Technology (Lithuania) introduces an original approach to achieve periodic functionalization of graphene by substrate patterning using ultrashort laser pulses. 

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The method utilizes laser-induced periodic surface structures (LIPSS) produced on Si wafer with thermally grown oxide layer. Under specific laser irradiation conditions, LIPSS remain confined at SiO2/Si interface and induce periodic covalent functionalization of monolayer graphene. This technique offers a straightforward and controlled route to functionalize 2D materials with high periodicity and spatial resolution.

Schematics of LIPSS formation and graphene functionalization on SiO2/Si samples. The ratio of intensities of D and G modes in the Raman spectrum of graphene across the LIPSS is shown in the right top, indicating the periodic formation of sp3 carbons in the graphene lattice.
Description
Schematics of LIPSS formation and graphene functionalization on SiO2/Si samples. The ratio of intensities of D and G modes in the Raman spectrum of graphene across the LIPSS is shown in the right top, indicating the periodic formation of sp3 carbons in the graphene lattice.