1. Pavel Pleskunov, Mariia Protsak, Zdenek Krtouš, T. Košutová, Marco Tosca, Kateryna Biliak, Veronika Cervenková, Daniil Nikitin, Jan Hanuš, Miroslav Cieslar, Ivan Gordeev, Milan Dopita, Michael Vorochta, Jaroslav Kousal, Ludvik Martinu, Andrei Choukourov
    Refractory Plasmonics of Reactively Sputtered Hafnium Nitride Nanoparticles: Pushing Limits
    Advanced Optical Materials 12 (2024) 2302715 (1)-2302715 (13).
  2. F. Hájek, V. Jarý, V. Babin, V. Vaněček, T. Hubáček, A. Hospodková, F. Dominec, T. Košutová
    Response of InGaN/GaN multiple quantum well structure to UV-C and vacuum UV optical excitation
    Journal of Luminescence 269 (2024) 120463(1)-120463(6).
  3. T. Hubáček, K. Kuldová, Z. Gedeonová, F. Hájek, T. Košutová, S. Banerjee, P. Hubík, J. Pangrác, T. Vaněk, A. Hospodková
    Impact of Ge doping on MOVPE grown InGaN layers
    Journal of Crystal Growth 604 (2023) 127043(1)-127043(5).
  4. A. Hanková, T. Košutová, J. Hanuš, A. Kuzminova, P. Pleskunov, M. Červená, P. Zeman, N. Khomiakova, F. Hájek, O. Kylián
    Morphological and structural evolution of gas-phase synthesized vanadium nanoparticle films induced by thermal treatment
    Materials Chemistry and Physics 301 (2023) 127587(1)-127587(7).
  5. A. Hospodková, F. Hájek, T. Hubáček, Z. Gedeonová, P. Hubík, M. Hývl, J. Pangrác, F. Dominec, T. Košutová
    Electron Transport Properties in HEMT structures improved by V-pit formation on AlGaN/GaN interface
    ACS Applied Materials and Interfaces 15 (2023) 19646-19652.
  6. J. Stránská Matějová, A. Hospodková, T. Košutová, T. Hubáček, M. Hývl, V. Holý
    V-pits formation in InGaN/GaN: influence of threading dislocations and indium content
    Journal of Physics D: Applied Physics 55 (2022) 255101(1)-255101(15).
  7. T. Košutová, L. Horáka, P. Pleskunov, J. Hanuš, D. Nikitin, P. Kúš, M. Cieslar, I. Gordeev, S. Burazer, A. Choukourov, M. Dopita
    Thermally-driven morphogenesis of niobium nanoparticles as witnessed by in-situ x-ray scattering
    Materials Chemistry and Physics 277 (2022) 1-8.
  8. T. Vaněk, F. Hájek, F. Dominec, T. Hubáček, K. Kuldová, J. Pangrác, T. Košutová, P. Kejzlar, P. Bábor, A. Lachowski, A. Hospodková
    Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms
    Journal of Crystal Growth 565 (2021) 126151(1)-126151(6).