Doping of the n-type Bi₂Se₃ single crystal with Fe, Ru, Os and Mo

Bi₂Se₃ may be considered among the most promising materials for spintronics and thermoelectric applications. We combined experimental photoelectron spectroscopy and theoretical (ab initio) methods to analyze the electronic properties and chemical states of atoms of VIIIB and VIB column elements and native defects in the topological insulator Bi₂Se₃. The relationship between the position of the Dirac cone and valence band maximum was explored and discussed. Doping with elements from the VIIIB column of the Periodic Table can be used to fine tune the electronic structure and transport properties.