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We introduced a new type of memory based on antiferromagnets that enables writing information using picosecond electric pulses. This involves a thousand times faster data storage than in the existing memories. Additionally, our memory exhibits multi-level memristor behaviour, which, apart from the use in any conventional digital electronics, may offer application in artificial neuron networks.
Description
The comparison of writing into antiferromagnet by microsecond electric pulses. (A) and terahertz pulses, with pulse length of one picosecond (B).