prof. Tomáš Jungwirth, Ph.D.

Head of Department

Category

Senior Scientist

Division (no.)

Division of Solid State Physics (3)

Department (no.)

Department of Spintronics and Nanoelectronics (15)

Telephone

+420 220 318 457

E-mail

jungw [at] fzu.cz

Locality

Cukrovarnická

Room

A 64/7

Hall effect in an antiferromagnet

Figure Top row: Left - Hall current in an external magnetic field applied to crystal comprising non-magnetic atoms. Middle – Hall current in a ferromagnet, the blue symbol marks unwanted ferromagnetic stray field. Right – Hall current in a crystal comprising antiferromagnetic and non-magnetic atoms. Middle row: Left - Ordinary Ohm’s current in a crystal comprising only non-magnetic atoms. Right – Same as left in a crystal comprising only antiferromagnetic atoms. Bottom row is a replica of the top row with h

Antiferromagnetic artificial neurons responding to femtosecond-laser pulses

Schematics and an antiferromagnetic crystal on a background with laser beams.

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

Relativistická spintronika

Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn₃Sn

Antiferromagnetic domain imaging

Terahertz electrical writing speed in an antiferromagnetic memory

Terahertz electrical writing speed in an antiferromagnetic memory

New principle of magnetic recording

Nový princip magnetického záznamu

Detection of Electrically Modulated Inverse Spin Hall Effect in an Fe/GaAs

Detekce elektricky modulovaného inverzniho spinového Hallova jevu v Fe/GaAs heterostrukturách

Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

Narušení směrové symetrie ve feromagnetických polovodičích (Ga,Mn)As a (Ga,Mn)(As,P) vysvětleno detekcí vrstevných chyb

New antiferromagnetic spintronic device

Nové antiferomagnetické spintronické součástky

Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

Spin Hall effect transistor

Objev ve výzkumu spinových tranzistorů

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