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  3. prof. Tomáš Jungwirth, Ph.D.
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prof. Tomáš Jungwirth, Ph.D.

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RV1_7786.jpg
Pracovní pozice
Head of Department
Category
Senior Scientist
Division (no.)
Division of Solid State Physics (3)
Department (no.)
Department of Spintronics and Nanoelectronics (15)
Telephone
+420 220 318 457
E-mail
jungw [at] fzu.cz
Locality
Cukrovarnická
Room
A 64/7
  • Profile
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Nanoscale imaging and control of altermagnetism in MnTe

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3-3_Nanoscale imaging and control of altermagnetism in MnTe_Fig_Nature_UPRAVENO.png

Altermagnetic lifting of Kramers spin degeneracy

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3-1_Altermagnetic lifting of Kramers spin degeneracy.webp

Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature

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Simulated XMLD–PEEM image

Anomalous Hall antiferromagnets

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The image shows a crystal of RuO2 with opposite magnetic moments on Ru atoms depicted in purple and cyan, that result in zero internal magnetization, and the Hall transverse deflection of the electrical current in this altermagnet.

Hall effect in an antiferromagnet

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Figure Top row: Left - Hall current in an external magnetic field applied to crystal comprising non-magnetic atoms. Middle – Hall current in a ferromagnet, the blue symbol marks unwanted ferromagnetic stray field. Right – Hall current in a crystal comprising antiferromagnetic and non-magnetic atoms. Middle row: Left - Ordinary Ohm’s current in a crystal comprising only non-magnetic atoms. Right – Same as left in a crystal comprising only antiferromagnetic atoms. Bottom row is a replica of the top row with h

Antiferromagnetic artificial neurons responding to femtosecond-laser pulses

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Schematics and an antiferromagnetic crystal on a background with laser beams.

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

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Relativistická spintronika

Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn3Sn

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Antiferromagnetic domain imaging

Terahertz electrical writing speed in an antiferromagnetic memory

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Terahertz electrical writing speed in an antiferromagnetic memory

New principle of magnetic recording

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Nový princip magnetického záznamu

Detection of Electrically Modulated Inverse Spin Hall Effect in an Fe/GaAs

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Detekce elektricky modulovaného inverzniho spinového Hallova jevu v Fe/GaAs heterostrukturách

Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)

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Narušení směrové symetrie ve feromagnetických polovodičích (Ga,Mn)As a (Ga,Mn)(As,P) vysvětleno detekcí vrstevných chyb

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