1. T. Vaněk, A. Hospodková, K. Blažek, E. Hulicius
    A hybrid detector based on MOVPE-grown InGaN/GaN multiple quantum wells with BGO scintillator layers
    Československý časopis pro fyziku 74 (2024) 13-17.
  2. A. Hospodková, F. Hájek, T. Hubáček, Z. Gedeonová, P. Hubík, J. J. Mareš, J. Pangrác, F. Dominec, K. Kuldová, E. Hulicius
    Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters
    Journal of Crystal Growth 605 (2023) 127061-1-127061-7.
  3. T. Hubáček, A. Hospodková, K. Kuldová, M. Slavická Zíková, J. Pangrác, J. Čížek, M.O. Liedke, M. Butterilng, A. Wagner, P. Hubík, E. Hulicius
    Improvement of luminescence properties of n-GaN using TEGa precursor
    Journal of Crystal Growth 531 (2020) 125383(1)-125383(7).
  4. F. Dominec, A. Hospodková, T. Hubáček, M. Slavická Zíková, J. Pangrác, K. Kuldová, A. Vetuško, E. Hulicius
    Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
    Journal of Crystal Growth 507 (2019) 246-250.
  5. T. Hubáček, A. Hospodková, K. Kuldová, J. Oswald, J. Pangrác, V. Jarý, F. Dominec, M. Slavická Zíková, F. Hájek, E. Hulicius, A. Vetuško, G. Ledoux, Ch. Dujardin, M. Nikl
    Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs
    CrystEngComm 21 (2019) 356-362.
  6. E. Hulicius, A. Hospodková, M. Slavická Zíková
    Quantum Dots
    Chapter 6: Quantum dots (pp.175-216), in: Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties, Ed.: Stuart Irvine, Peter Capper, Wiley Series in Materials for Electronic & Optoelectronic Applications, ISBN: 978-1-119-31301-4, October 2019, 584 Pages.
  7. H. Beran, V. Cílek, A. Fejfar, E. Hulicius, L. Lízal, V. Mařík, V. Pačes, M. Punčochář, R. Šrám, J. Vondráš, V. Wagner
    Where Czech energetics will be directed?
    ISBN 978-80-7261-560-5 Albatros Media a.s., 2018
  8. A. Hospodková, E. Hulicius, J. Pangrác, F. Dominec, M.P. Mikhailova, A.I. Veinger, I.V. Kochman
    InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy
    Journal of Crystal Growth 464 (2017) 206-210.
  9. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius
    Comparison of MOVPE Grown GaAs, InGaAs and GaAsSb Covering Layers for Different InAs/GaAs Quantum Dot Applications
    Journal of Crystal Growth 464 (2017) 59-63.
  10. A. Hospodková, J. Pangrác, K. Kuldová, M. Nikl, O. Pacherová, J. Oswald, T. Hubáček, M. Slavická Zíková, P. Brůža, D. Pánek, K. Blažek, G. Ledoux, Ch. Dujardin, M. Heuken, E. Hulicius
    Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications
    Proceedings of SPIE 10036 (2017) UNSP1003617(1)-UNSP1003617(4).
  11. M.P. Mikhailova, V.A. Berezovets, R.V. Parfeniev, L.V. Danilov, M.O. Safonchik, A. Hospodková, J. Pangrác, E. Hulicius
    Vertical Transport in Type-II Heterojunctions with InAs/GaSb/AlSb Composite Quantum Wells in a High Magnetic Field
    Semiconductors 51 (2017) 1343-1349.
  12. A. Hospodková, J. Oswald, J. Pangrác, K. Kuldová, M. Slavická Zíková, J. Vyskočil, E. Hulicius
    Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures
    Physica B: Condensed Matter 480 (2016) 14-22.
  13. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Vyskočil, E. Hulicius, J. Oswald, P. Komninou, J. Kioseoglou
    The Metalorganic Vapour Phase Epitaxy Growth of AIIIBV Heterostructures Observed by Reflection Anisotropy Spectroscopy
    Acta Physica Polonica A 129 (2016) A-75-A-78.
  14. M.P. Mikhaliova, A.I. Veinger, I.V. Kochman, P.V. Semenikhin, K.V. Kalinina, R.V. Parfeniev, V.A. Berezovets, A. Hospodková, J. Pangrác, E. Hulicius
    Microwave radiation absorption and Shubnikov de Haas oscillations in semi-metal InAs/GaSb/AlSb composite quantum wells
    Proceedings of SPIE 9755 (2016) 97552R(1)-97552R(1).
  15. M.P. Mikhailova, A.I. Veinger, I.V. Kochman, P.V. Semenikhin, K.V. Kalinina, R.V. Parfeniev, V.A. Berezovets, M.O. Safonchik, A. Hospodková, J. Pangrác, M. Slavická Zíková, E. Hulicius
    Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells
    Journal of Nanophotonics 10 (2016) 046013(1)-046013(8).
  16. I.V. Kochman, A.I. Veinger, M.P. Mikhailova, P.V. Semenikhin, K.V. Kalinina, R.V. Parfeniev, V.A. Berezovetz, A. Hospodková, J. Pangrác, E. Hulicius
    Microwave radiation absorption by 2D-electrons in the type II composite InAs/GaSb/AlSb quantum wells in a magnetic field
    Journal of Physics: Conference Series 769 (2016) 012075(1)-012075(6).
  17. M. Slavická Zíková, A. Hospodková, J. Pangrác, J. Oswald, P. Krčil, E. Hulicius, Ph. Komninou, J. Kioseoglou
    MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
    Journal of Crystal Growth 414 (2015) 167-171.
  18. A. Hospodková, J. Pangrác, J. Vyskočil, M. Slavická Zíková, J. Oswald, Ph. Komninou, E. Hulicius
    Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy
    Journal of Crystal Growth 414 (2015) 156-160.
  19. Z. Chobola, M. Luňák, J. Vaněk, E. Hulicius, I. Kusák
    LOW-FREQUENCY NOISE MEASUREMENTS USED FOR QUALITY ASSESSMENT OF GaSb BASED LASER DIODES PREPARED BY MOLECULAR BEAM EPITAXY
    Journal of Electrical Engineering 66 (2015) 226-230.
  20. M. Mikhailova, E. Ivanov, L. Danilov, A. Petukhov, K. Kalinina, N. Stoyanov, Y. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Superlinearity and temperature dependence of electroluminescence in heterostructures with deep AlSb/InAs1-xSbx/AlSb quantum well
    Proceedings of SPIE 9450 (2015) 94500J-94500J.
  21. A. Hospodková, J. Pangrác, M. Slavická Zíková, J. Oswald, J. Vyskočil, Ph. Komninou, J. Kioseoglou, N. Florini, E. Hulicius
    Effect of the Lower and Upper Interfaces on the Quality of InAs/GaAs Quantum Dots
    Applied Surface Science 301 (2014) 173-177.
  22. G.P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, O. Pacherová, Ph. Komninou
    Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates
    Applied Surface Science 306 (2014) 89-93.
  23. Ph. Komninou, P. Gladkov, Th. Karakostas, J. Pangrác, O. Pacherová, J. Vaniš, E. Hulicius
    Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates
    Journal of Crystal Growth 396 (2014) 54-60.
  24. M.P. Mikhailova, E.V. Ivanov, L.V. Danilov, A.A. Petukhov, K.V. Kalinina, S.I. Slobozhanyuk, G.G. Zegrya, N.D. Stoyanov, Yu.P. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1-xSbx/AlSb deep quantum well
    Journal of Applied Physics 115 (2014) 223102(1)-223102(5).
  25. A. Hospodková, M. Nikl, O. Pacherová, J. Oswald, P. Brůža, D. Pánek, B. Foltynski, E. Hulicius, A. Beitlerová, M. Heuken
    InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study
    Nanotechnology 25 (2014) 455501-1-455501-6.
  26. P. Morávek, J. Pangrác, M. Fulem, E. Hulicius, K. Růžička
    Vapor pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum
    Journal of Chemical & Engineering Data 59 (2014) 4179-4183.
  27. M. P. Mikhailova, I. A. Andreev, E. V. Ivanov, G. G. Konovalov, E. A. Grebentshikova, Yu. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác
    Photoelectric and Luminescence Properties of GaSb-Based Nanoheterostructures with a Deep Al(As)Sb/InAsSb/Al(As)Sb Quantum Well Grown by Metalorganic Vapor-Phase Epitaxy
    Semiconductors 47 (2013) 1041-1045.
  28. M. P. Mikhailova, L. V. Danilov, K. V. Kalinina, E. V. Ivanov, N. D. Stoyanov, G. G. Zegrya, Y. P. Yaklovev, A. Hospodková, J. Pangrác, M. Slavická Zíková, E. Hulicius
    Superlinear Luminescence and Enhancement of Optical Power in GaSb-based Heterostructures with High Conduction-Band Offsets and Nanostructures with Deep Quantum Wells
    Chapter in The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, M. Razeghi. L. Esaki, and K. von Klitzing, Eds., SPIE Press, Bellingham, WA, pp. 105-131 (2013), ISBN: 0819495964.
  29. P. Morávek, M. Fulem, J. Pangrác, E. Hulicius, K. Růžička
    Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony
    Fluid Phase Equilibria 360 (2013) 106-110.
  30. A. Hospodková, J. Oswald, J. Pangrác, M. Slavická Zíková, J. Kubištová, Ph. Komninou, J. Kioseoglou, K. Kuldová, E. Hulicius
    Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier
    Journal of Applied Physics 114 (2013) 174305(1)-174305(5).
  31. E. Hulicius, V. Kubeček
    Semiconductor lasers for medical applications
    Chapter 8 in Lasers for Medical Applications: Diagnostics, Therapy and Surgery, Ed. H. Jelínková, Woodhead Publishing Limited (2013) pp.222-250, ISBN: 0857092375, 9780857092373.
  32. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, K. Kuldová, J. Vyskočil, E. Hulicius
    Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
    Journal of Crystal Growth 370 (2013) 303-306.
  33. J. Walachová, J. Zelinka, S. Leshkov, F. Šroubek, J. Pangrác, E. Hulicius, J. Vaniš
    Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state
    Physica E: Low-dimensional Systems and Nanostructures 48 (2013) 61-65.
  34. J. Grym, D. Nohavica, P. Gladkov, E. Hulicius, J. Pangrác, K. Piksová
    Epitaxial growth on porous GaAs substrates
    Comptes Rendus Chimie 16 (2013) 59-64.
  35. A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, J. Kubištová, K. Kuldová, P. Hazdra, E. Hulicius
    Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition
    Journal of Physics D: Applied Physics 46 (2013) 095103(1)-095103(6).
  36. P. Hazdra, J. Oswald, A. Hospodková, E. Hulicius, J. Pangrác
    Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs
    Thin Solid Films 543 (2013) 83-87.
  37. D. Nohavica, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, Z. Jarchovský
    Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs
    International Journal of Nanotechnology 9 (2012) 732-745.
  38. M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, K. V. Kalinina, N. D. Stoyanov, G. G. Zegrya, Yu. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, M. Slavická Zíková
    Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells
    Journal of Applied Physics 112 (2012) 023108(1)-023108(5).
  39. J. Shrbená, K. Šperlink, E. Hulicius, V. Křečková, J. Kubátová, M. Solar
    Nanotechnologies in the Czech Republic
    NANOTECHNOLOGIES IN THE CZECH REPUBLIC 2012
  40. A. Hospodková, J. Pangrác, J. Oswald, P. Hazdra, K. Kuldová, J. Vyskočil, E. Hulicius
    Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
    Journal of Crystal Growth 315 (2011) 110-113.
  41. A. Hospodková, J. Pangrác, J. Vyskočil, J. Oswald, A. Vetuško, O. Caha, P. Hazdra, K. Kuldová, E. Hulicius
    InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
    Journal of Crystal Growth 317 (2011) 39-42.
  42. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 $\mu$m Bands
    Journal of Nanoscience and Nanotechnology 11 (2011) 6804-6809.
  43. P. Gladkov, E. Hulicius, T. Paskova, E. Preble, K.R. Evans
    Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
    Applied Physics Letters 100 (2011) 031908(1)-031908(3).
  44. M. Fulem, P. Morávek, J. Pangrác, E. Hulicius, T. Šimeček, K. Růžička, V. Růžička, B. Kozyrkin, V. Shatunov
    Vapor Pressure of Trimethylantimony and tert-Butyldimethylantimony
    Journal of Chemical & Engineering Data 55 (2010) 362-365.
  45. A. Hospodková, J. Vyskočil, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová
    Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy
    Surface Science 604 (2010) 318-321.
  46. M. P. Mikhailova, E. V. Ivanov, K. D. Moiseev, Y. P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, T. Šimeček
    Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
    Semiconductors 44 (2010) 66-71.
  47. K. Sommer, L. Baldi, E. Hulicius, C. Moitier, F. Mudry, T. Wilkins
    Economic Impact of NMP
    NMP Expert Advisory Group (EAG) Position Paper on Future RTD Activities of NMP for the Period 2010 - 2015, Publications Office of the European Union, Luxembourg 2010, pp. 5 – 30, ISBN 978-92-79-14065-5
  48. K. Moiseev, E. Ivanov, V. Romanov, M. Mikhailova, Y. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, T. Šimeček
    Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature
    Physics Procedia 3 (2010) 1189-1193.
  49. A. Hospodková, E. Hulicius, J. Pangrác, J. Oswald, J. Vyskočil, K. Kuldová, T. Šimeček, P. Hazdra, O.Caha
    InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
    Journal of Crystal Growth 312 (2010) 1383-1387.
  50. I. Matulková, J. Cihelka, J. Vyskočil, Z. Zelinger, E. Hulicius, T. Šimeček, S. Civiš
    Diagnostic and characterization of the VCSEL diodes based on GaSb
    Applied Physics B: Laser and Optics 99 (2010) 333-338.