Quantum size effect in optoelectronic properties of nanostructures embedded in semiconductor layers (nano-Si)


The project is solved in cooperation with colleagues from the Institute of Semiconductor Physics Russian Academy of Sciences, in Novosibirsk. From the technological point of view, we will focus mainly on the functionalization of the surface of nanoparticles and on methods of optimal incorporation of nanoparticles into thin layers of hydrogenated amorphous silicon and PIN transitions. From an experimental point of view, the main emphasis will be on the study of defects in the forbidden band a-Si: H by measuring the spectra of optical absorption and photocurrent, the study of measuring the efficiency of the photovoltaic phenomenon and electroluminescence. From a theoretical point of view, emphasis will be placed on the research of such phenomena as the influence of the presence of quantum nanostructures on the density of states in the forbidden band a-Si: H. Next, we will compare the results of theoretical modeling of charge transfer by the functionalized surface of nanoparticles with the measured optical spectra. The obtained results will help to understand the processes of light conversion in photovoltaic components and electroluminescent diodes made on the basis of PIN thin-film silicon.