Half magnet, half semiconductor: Researchers from the Institute of Physics ASCR introduce an antiferromagnetic semiconductor device
Researchers from the Institute of Physics of the Academy of Sciences of the Czech Republic, in collaboration with researchers from Barcelona, Berkeley, and Halle have demonstrated an experimental spin-based microelectronic device using an antiferromagnetic semiconductor compound Sr2IrO4.
Magnetic inside but not on outside: Researchers from the Institute of Physics introduce antiferromagnetic memories
Researchers from the Institute of Physics of the Academy of Sciences of the Czech Republic, in collaboration with researchers from Berkeley and Barcelona, have demonstrated that it is possible to use another type of magnetic materials, the so-called antiferromagnets to store information. Antiferromagnetic materials are magnetic inside, however, their microscopic magnetic moments sitting on individual atoms alternate between two opposite orientations.