New perspectives for heavily boron-doped diamond Raman spectrum analysis

Description

Model of diamond Raman peak width vs boron concentration in epitaxial boron-doped diamond

This study advances Raman spectroscopy as a powerful non-destructive tool for analysing heavily boron-doped diamond (BDD). By incorporating electronic Raman scattering effects into spectral analysis, it enables precise determination of atomic boron concentration, carrier mobility, and conductivity—critical parameters for optimizing diamond-based electronic devices. The proposed multiple Fano-function formalism refines existing Raman models, offering a more accurate assessment of BDD properties across a broad doping range. This work provides a new methodology for characterizing BDD’s electrical behaviour.