Boron-doped diamond as a functional semiconductive layer in chemiresistive sensors for the enhanced gas sensing of NO2 at room temperature

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(a) Response of hybrid BDD/Pd-SnO2 sensor to 10 ppm NO2 at various UV intensities and (b) and recurring injection of NO2  gas of different concentrations in dark and under UV light illumination.
Description
(a) Response of hybrid BDD/Pd-SnO2 sensor to 10 ppm NO2 at various UV intensities and (b) and recurring injection of NO2  gas of different concentrations in dark and under UV light illumination.

This research investigated the fabrication and characterization of chemiresistive gas sensors based on nanocrystalline boron-doped diamond (BDD) and Pd-SnO2 layer in the form of a BDD/Pd-SnO2 heterostructure. The hybrid BDD/Pd-SnO2 sensor exhibited an improved response in the presence of oxidizing NO2 gas when compared to BDD-based sensors, and its sensitivity and recovery characteristics were further enhanced upon photo-assisted (illumination with UV) gas sensing. The present approach on fabrication of chemiresistive gas sensors based on BDD and metal oxide layer demonstrates the role of the conductive diamond layer and the synergistic effect of the p-n heterojunction.