Boron- and phosphorus-doped diamond layers are of interest as promising semiconductor materials for high power and high temperature electronics. To optimize the properties of such layers and adjust the deposition process accordingly, it is important to analyse the concentration of the dopants. A new methodology for quantitative analysis of B- and P-doped diamond by glow discharge optical emission spectroscopy (GDOES) was developed and brought into routine use. By using neon as the discharge gas, a detection limit of phosphorus was improved by an order of magnitude compared to the conventional approach.
Determination of boron and phosphorus concentrations in heavily doped diamond by glow discharge emission spectroscopy in argon and neon