An article has been published on the TU Wien website focusing on the promising field of spintronics, which utilizes not only the electric charge but also the electron spin to develop a new generation of electronic devices. The article highlights results obtained within an international collaboration in which scientists from FZU played a leading role.
The work investigates the UO₂/Fe₃O₄ system, where epitaxial strain at the interface modifies the magnetic behavior of uranium dioxide. While bulk UO₂ is a frustrated 3k antiferromagnet, the strain in thin films lifts the magnetic frustration and induces a single-ion anisotropy, enabling control of the magnetic state. This finding opens new possibilities for strain-based manipulation of antiferromagnetic spin structures, which are considered promising candidates for future memory and logic devices due to their ultrafast spin dynamics and absence of stray magnetic fields.
The original article is available to read HERE