Investigation of the structural defects in SiC nanostructures and their composites by optical and magnetic resonance methods perspective for integral optoelectronics and spintronics

Low dimensional semiconductor structures exhibit electronic and optical properties markedly different from those of bulk materials. This is mainly governed by the finite size inducing charge carrier confinement and quantitisation effects on the band energy structure, and by the interface effects enhanced by high specific surfaces. In this framework, silicon carbide (SiC) is an appropriate candidate since its electronic and optical properties can be driven by the crystallite size and structure. The physical properties of nanoparticles (np) and microparticles (mp) SiC will be investigated as a function of the doping level, C/Si ratios and the conditions of their thermal treatments. Using continuous wave electron paramagnetic resonance (EPR), pulse EPR and electron nuclear double resonance techniques the type of the electronic active centres resulting from defects, impurities, dangling bonds, or doping agents will be identified in np-SiC, mp-SiC, Si3N4-SiC and SiC?Si3N4?Si2N2O nanocomposites that have effects in their photoluminescence properties.