I am engaged in applied research of semiconductor scintillators grown by metalorganic vapor phase epitaxy (MOVPE). Base material of these scintillators is gallium nitride (GaN), in which indium gallium nitride (InGaN) layers are embedded to form quantum wells. My research consists in characterization of the scintillators grown (measurement of luminescence properties, surface topography, composition), as well as in the growth technology. Last, but not least, I prepare special substrates for epitaxy.

ORCID 0000-0002-6001-4282