1. J. Pilař, A. Mašláni, T. Hostinský, J. Zich, Z. Remeš, M. Hlína, J. Fathi, S. Sharma, V. S. Sikarwar, T. Mates, J. Kuliček, B. Rezek, A. Prokhorov, J. Ukraintsev, M. Buryi
    Thermal Plasma-Induced Modifications of ZnO Crystalline Facets
    Journal of Physics: Conference Series 3157 (2025) 012013(1)- 012013(10).
  2. J. Fathi, M. Hlína, T. Mates, M. Buryi, V.S. Sikarwar, R. Mušálek, S. Sharma, M. Lojka, A. Jiříčková, O. Jankovský, J. Riedl, M. Karlík, P. Kratochvíl, H. Thürlová, F. Růzička, F. Průša, M. Jeremiáš, A. Mašláni
    Thermo-Chemical recycling of polypropylene via high-power microwave plasma gasification: Syngas and metal carbide production
    Chemical Engineering Journal 511 (2025) 161910(1)-161910(13).
  3. J. Fathi, A. Mašláni, M. Hlína, F. Lukáč, R. Mušálek, O. Jankovský, M. Lojka, A. Jiříčková, S. Skoblia, T. Mates, N. N. B. Jaafar, S. Sharma, D. Pilnaj, M. Pohořelý, M. Jeremiáš
    Multiple benefits of polypropylene plasma gasification to consolidate plastic treatment, CO2 utilization, and renewable electricity storage
    Fuel 368 (2024) 131692(1)-131692(12).
  4. V.S. Sikarwar, A. Mašláni, G. Oost, J. Fathi, M. Hlína, T. Mates, M. Pohořelý, M. Jeremiáš
    Integration of thermal plasma with CCUS to valorize sewage sludge
    Energy (https://www.sciencedirect.com/journal/energy) Volume 288, strany 129896(1) - 129896(11)
  5. A. Mašláni, M. Hlína, M. Hrabovský, P. Křenek, V.S. Sikarwar, J. Fathi, S. Raman, S. Skoblia, O. Jankovský, A. Jiříčková, S. Sharma, T. Mates, R. Mušálek, F. Lukáč, M. Jeremiáš
    Impact of natural gas composition on steam thermal plasma assisted pyrolysis for hydrogen and solid carbon production
    Energy Conversion and Management 297 (2023) 117748(1)-117748(10).
  6. J. Vyskočil, P. Mareš, Z. Hubička, M. Čada, T. Mates
    Hybrid HiPIMS + controlled pulsed arc for deposition of hard coatings.
    Surface & Coatings Technology 446 (2022) 128765(1)-128765(6).
  7. V.S. Sikarwar, A. Mašláni, M. Hlína, J. Fathi, T. Mates, M. Pohořelý, E. Meers, M. Šyc, M. Jeremiáš
    Thermal plasma assisted pyrolysis and gasification of RDF by utilizing sequestered CO2 as gasifying agent
    Journal of CO2 Utilization 66 (2022) 102275(1)-102275(10).
  8. P. Mareš, M. Dubau, J. Polášek, T. Mates, T. Kozák, J. Vyskočil
    High deposition rate films prepared by reactive HiPIMS
    Vacuum 191 (2021) 110329(1)-110329(10).
  9. T. Mates, J. Polášek, P. Mareš, M. Dubau, A. Vetuško, M. Ledinský, A. Fejfar, J. Vyskočil
    Growth defects in WC:H layers for tribological applications
    Vacuum 178 (2020) 109372(1)-109372(7).
  10. J. E. Hoetzel, O. Caglar, J. S. Cashmore, C. Goury, J. Kalaš, M. Klindworth, M. Kupich, G.-F. Leu, M.-H. Lindic, P. A. Losio, T. Mates, B. Mereu, T. Roschek, I. Sinicco
    Microcrystalline bottom cells in large area thin film silicon MICROMORPH™ solar modules
    Solar Energy Materials and Solar Cells 157 (2016) 178-189.
  11. P.C.P. Bronsveld, T. Mates, A. Fejfar, J. Kočka, J.K. Rath, R.E.I. Schropp
    High hydrogen dilution and low substrate temperature cause columnar growth of hydrogenated amorphous silicon
    physica status solidi (a) 207 (2010) 525-529.
  12. J. Kočka, T. h. Stuchlíková, M. Ledinský, J. Stuchlík, T. Mates, A. Fejfar
    Microcrystalline silicon, grain boundaries and role of oxygen.
    Solar Energy Materials and Solar Cells 93 (2009) 1444-1447.
  13. J. Stuchlík, M. Ledinský, S. Honda, I. Drbohlav, T. Mates, A. Fejfar, K. Hruška, T. h. Stuchlíková, J. Kočka
    LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition.
    Thin Solid Films 517 (2009) 6829-6832.
  14. T. Mates, A. Fejfar, B. Rezek, J. Kočka, P.C. P. Bronsveld, J.K. Rath, R.E.I.Schropp
    C-AFM and X-TEM: Studies of Mixed-Phase Silicon Thin Films.
    Imaging and Microscopy 10 (2008) 30-32.
  15. M. Ledinský, A. Vetuško, J. Stuchlík, T. Mates, A. Fejfar, J. Kočka, J. Štěpánek
    Crystallinity of the mixed phase silicon thin films by Raman spectroscopy.
    Journal of Non-Crystalline Solids 354 (2008) 2253-2257.
  16. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    A simple tool for quality evaluation of the microcrystalline silicon prepared at high growth rate.
    Thin Solid Films 516 (2008) 4966-4969.
  17. S. Honda, T. Mates, B. Rezek, A. Fejfar, J. Kočka
    Microscopic study of the H2O vapor treatment of the silicon grain boundaries.
    Journal of Non-Crystalline Solids 354 (2008) 2310-2313.
  18. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    A simple quality factor for characterization of thin silicon films
    Journal of Non-Crystalline Solids 354 (2008) 2227-2230.
  19. A. Vetuško, M. Ledinský, J. Stuchlík, T. Mates, A. Fejfar, J. Kočka
    Mapping of mechanical stress in silicon thin films on silicon cantilevers by Raman microspectroscopy
    Journal of Non-Crystalline Solids 354 (2008) 2235-2237.
  20. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Properties of thin film silicon, prepared at high growth rate in a wide range of thicknesses
    Journal of Non-Crystalline Solids 354 (2008) 2451-2454.
  21. T. Mates, P.C.P. Bronsveld, A. Fejfar, B. Rezek, J. Kočka, J.K. Rath, R.E.I. Schropp
    Structure of mixed-phase Si films studied by C-AFM and X-TEM.
    Journal of Physics: Conference Series 61 (2007) 790-794.
  22. A. Hospodková, V. Křápek, T. Mates, K. Kuldová, J. Pangrác, E. Hulicius, J. Oswald, K. Melichar, J. Humlíček, T. Šimeček
    Lateral shape of InAs/GaAs quantum dots in vertically correlated structures
    Journal of Crystal Growth 298 (2007) 570-573.
  23. A. Hospodková, E. Hulicius, J. Oswald, J. Pangrác, T. Mates, K. Kuldová, K. Melichar, T. Šimeček
    Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
    Journal of Crystal Growth 298 (2007) 582-585.
  24. J. Kočka, T. Mates, M. Ledinský, J. Stuchlík, A. Fejfar, K. Gunnarsson
    Controlled growth of nanocrystalline silicon on permalloy micro-patterns
    Applied Physics A-Materials Science & Processing A 88 (2007) 797-800.
  25. J. Čermák, B. Rezek, V. Cimrová, D. Výprachtický, M. Ledinský, T. Mates, A. Fejfar, J. Kočka
    Correlation of atomic force microscopy detecting local conductivity and micro-Raman spectroscopy on polymer-fullerene composite films
    Physica Status Solidi-Rapid Research Letters 1 (5) (2007) 193-195.
  26. T. Kohoutek, T. Wagner, J. Orava, M. Krbal, A. Fejfar, T. Mates, S.O. Kasap, M. Frumar
    Surface morphology of spin-coated As-S-Se chalcogenide thin films
    Journal of Non-Crystalline Solids 353 (2007) 1437-1440.
  27. S.Honda, T. Mates, M. Ledinský, A. Fejfar, J. Kočka, T.Yamazaki, Y.Uraoka, T.Fuyuki, H.Boldyryeva, A.Macková, V.Peřina
    Defects generation by hydrogen passivation of polycrystalline silicon thin films.
    Solar Energy 80 (2006) 653-657.
  28. S. Honda, T. Mates, K. Knížek, M. Ledinský, A. Fejfar, J. Kočka, T. Yamazaki, Y.Uraoka, T.Fuyuki
    Hydrogenation of polycrystalline silicon thin films
    Thin Solid Films 501 (2006) 144-148.
  29. H.Boldyryeva, S.Honda, A.Macková, T. Mates, A. Fejfar, J. Kočka
    Characterization of hydrogen contained in passivated poly-Si and microcrystalline-Si by ERDA technique
    Surface and Interface Analysis 38, č.4 (2006) 819-822.
  30. I. Pelant, T.Ostatnický, J.Valenta, K.Luterová, E.Skopalová, T. Mates, R.G.Elliman
    Waveguide cores containing silicon nanocrystals as active spectral filters for silicon-based photonics
    Applied Physics B: Laser and Optics 83 (2006) 87-91.
  31. J. Kočka, T. Mates, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Characterization of grain growth, nature and role of grain boundaries in microcrystalline silicon – review of typical features.
    Thin Solid Films 501 (2006) 107-112.
  32. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Transport properties of microcrystalline silicon prepared at high growth rate.
    Journal of Non-Crystalline Solids 352 (2006) 1097-1100.
  33. J. Kočka, T. Mates, M. Ledinský, T. h. Stuchlíková, J. Stuchlík, A. Fejfar
    Microcrystalline silicon prepared at magnetic field modified nucleation
    Journal of Non-Crystalline Solids 352 (2006) 901-905.
  34. M. Ledinský, L. Fekete, J. Stuchlík, T. Mates, A. Fejfar, J. Kočka
    Characterization of mixed phase silicon by Raman spectroscopy
    Journal of Non-Crystalline Solids 352 (2006) 1209-1212.
  35. T. Mates, P.C.P.Bronsveld, A. Fejfar, B. Rezek, J. Kočka, J.K.Rath, R.E.I. Schropp
    Detailed structural study of low temperature mixed-phase Si films by X-TEM and ambient conductive AFM.
    Journal of Non-Crystalline Solids 352 (2006) 1011-1015.
  36. P.C.P.Bronsveld, J.K.Rath, R.E.Schropp, T. Mates, A. Fejfar, B. Rezek, J. Kočka
    Internal structure of mixed phase hydrogenated silicon thin films made at 39oC
    Applied Physics Letters 89 (2006) 051922-1-051922-3.
  37. A. Fejfar, J. Stuchlík, T. Mates, M. Ledinský, S. Honda, J. Kočka
    Patterning of hydrogenated microcrystalline silicon growth by magnetic field
    Applied Physics Letters 87 (2005) 011901(1)- 01190(3).
  38. S. Honda, T. Mates, M. Ledinský, J. Oswald, A. Fejfar, J. Kočka, T. Yamazaki, Y. Uraoka, T. Fuyuk
    Effect of hydrogen passivation on polycrystalline silicon thin films
    Thin Solid Films 487 (2005) 152- 156.
  39. K. Luterová, V. Švrček, T. Mates, M. Ledinský, M. Ito, A. Fejfar, J. Kočka
    Thin silicon films deposited at low substrate temperatures studied by surface photovoltage technique
    Thin Solid Films 451-452 (2004) 408-412.
  40. J. Kočka, A. Fejfar, T. Mates, P. Fojtík, K. Dohnalová, K. Luterová, J. Stuchlík, T. h. Stuchlíková, I. Pelant, B. Rezek, A. Stemmer, M. Ito
    The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon.
    physica status solidi (c) 1 (2004) 1097-1114.
  41. A. Fejfar, T. Mates, O. Čertík, B. Rezek, J. Stuchlík, I. Pelant, J. Kočka
    Model of electronic transport in microcrystalline silicon and its use for prediction of device performance.
    J. Non-Cryst. Solids 338-340 (2004) 303 - 309
  42. J. Kočka, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, T. h. Stuchlíková, J. Stuchlík, I. Pelant, A. Fejfar, M. Ito, K. Ro, H. Uyama
    Formation of Microcrystalline Silicon at Low Temperatures and Role of Hydrogen
    Journal of Non-Crystalline Solids 338-340 (2004) 287-290.
  43. B. Rezek, T. Mates, J. Stuchlík, J. Kočka, A. Stemmer
    Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy.
    Appl. Phys. Lett. 83 (2003) 1764 - 1766
  44. A. Fejfar, T. Mates, P. Fojtík, M. Ledinský, K. Luterová, T. h. Stuchlíková, I. Pelant, J. Kočka, V. Baumruk, A. Macková, M. Ito, K. Ro, H. Uyama
    Sructure and properties of silicon thin films deposited at low substrate temperatures
    Japanese Journal of Applied Physics 242 (2003) L987- L989.
  45. J. Kočka, A. Fejfar, T. h. Stuchlíková, J. Stuchlík, P. Fojtík, T. Mates, B. Rezek, K. Luterová, V. Švrček, I. Pelant
    Basic features of transport in microcrystalline silicon
    Solar Energy Materials and Solar Cells 78 (2003) 493-512.
  46. M. Ito, S. Yoneyama, Y. Ito, H. Uyama, T. Mates, M. Ledinský, K. Luterová, P. Fojtík, T. h. Stuchlíková, A. Fejfar, J. Kočka
    Silicon thin films deposited at very low substrate temperature
    Thin Solid Films 442 (2003) 163-166.
  47. J. Kočka, T. h. Stuchlíková, J. Stuchlík, B. Rezek, T. Mates, V. Švrček, P. Fojtík, I. Pelant, A. Fejfar
    Model of transport in microcrystalline silicon.
    J. Non-Cryst. Solids 299-302 (2002) 355 - 359
  48. B. Rezek, T. Mates, J. Stuchlík, A. Fejfar, J. Kočka
    Influence of combined AFM/current measurement on local electronic properties of silicon thin films.
    J. Non-Cryst. Solids 299-302 (2002) 360 - 363
  49. T. Mates, A. Fejfar, I. Drbohlav, B. Rezek, P. Fojtík, K. Luterová, J. Kočka, Ch. Koch, M. B. Schubert, M. Ito, K. Ro, H. Uyama
    Grains in protocrystalline silicon grown at very low substrate temperatures.
    J. Non-Cryst. Solids 299-302 (2002) 767 - 770
  50. P. Fojtík, K. Dohnalová, T. Mates, J. Stuchlík, I. Gregora, J. Chval, A. Fejfar, J. Kočka, I. Pelant
    Rapid crystallization of amorphous silicon at room temperature.
    Philosophical Magazine B (2002) 1785-1793.