Ing. Matěj Hývl

Award for a Contribution at the ICANS 28 Conference

Abstract

Matěj Hývl from the Department of Thin Films and Nanostructures presented a contribution entitled “Nanoscale Study of the Hole-selective Passivating Contacts for High-Efficiency Silicon Solar Cells Using C-AFM Tomography“ for which he received one of the three awards for the best poster at the conference.