InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study


We prepare InGaN/GaN multiple quantum well (MQW) structure by metal–organic vapor phase epitaxy (MOVPE) and characterize it by XRD, photoluminescence and radioluminescence measurements. We demonstrated its suitability for scintillator application by an unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft x-ray source in extended dynamical and time scales. Further improvements of the structure are suggested, but even the presently reported decay characteristics of the excitonic emission in MQW are better compared to the currently widely used single crystal YAP:Ce or YAG:Ce scintillators. Thus, such a type of a semiconductor scintillator is highly promising for fast detection of soft x-ray and related beam diagnostics.


Multiplex InGaN/GaN quantum structure