1. A. Hospodková, J. Pangrác, J. Oswald, P. Hazdra, K. Kuldová, J. Vyskočil, E. Hulicius
    Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
    Journal of Crystal Growth 315 (2011) 110-113.
  2. A. Hospodková, J. Pangrác, J. Vyskočil, J. Oswald, A. Vetuško, O. Caha, P. Hazdra, K. Kuldová, E. Hulicius
    InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
    Journal of Crystal Growth 317 (2011) 39-42.
  3. J. Ren, T. Wagner, M. Bartos, M. Frumar, J. Oswald, M. Kincl, B. Frumarova, G. Chen.
    Intense near-infrared and midinfrared luminescence from the Dy3+-doped GeSe2-Ga2Se3MI(M=K, Cs, Ag) chalcohalide glasses at 1.32, 1.73, and 2.67 nm.
    Journal of Applied Physics 109 (2011) 033105(1)-033105(7).
  4. P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 $\mu$m Bands
    Journal of Nanoscience and Nanotechnology 11 (2011) 6804-6809.
  5. P. Hazdra, J. Oswald, M. Atef, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
    Materials Science and Engineering B 147 (2008) 175-178.
  6. E. Hulicius, J. Oswald, J. Pangrác, J. Vyskočil, A. Hospodková, K. Kuldová, K. Melichar, T.Šimeček
    Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
    Journal of Crystal Growth 310 (2008) 2229-2233.
  7. P. Hazdra, J. Voves, J. Oswald, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
    Optical characterization of MOVPE grown vertically correlated InAs/GaAs quantum dots
    Microelectronics Journal 39 (2008) 1070-1074.
  8. V. Prajzler, V. Jeřábek, O. Lyutakov, I. Hüttel, J. Špirková, V. Machovič, J. Oswald, D. Chvostová, J. Zavadil
    Optical Properties of Erbium and Erbium/Ytterbium Doped Polymethylmethacrylate
    Acta Polytechnica, Czech Technical University in Prague 48 (2008) 14-20.
  9. A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová, J. Vyskočil, K. Melichar, T. Šimeček
    Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
    Journal of Crystal Growth 310 (2008) 5081-5084.