1. L. Střižík, J. Zhang, T. Wágner, J. Oswald, T. Kohoutek, B.M. Walsh, J. Přikryl, R. Svoboda, C. Liu, B. Frumarová, M. Frumar, M. Pavlista, W.J. Park, J. Heo
    Green, red and near-infrared photon up-conversion in Ga-Ge-Sb-S:Er3+ amorphous chalcogenides
    Journal of Luminescence 147 (2014) 209-215.
  2. T. Klásek, K. Rubešová, V. Jakeš, O. Jankovský, J. Oswald
    Infrared luminescence in Er3+:Yb3Al5O12 bulk ceramics prepared by sol–gel method.
    Journal of the European Ceramic Society 34 (2014) 3779-3782.
  3. A. Hospodková, J. Pangrác, M. Slavická Zíková, J. Oswald, J. Vyskočil, Ph. Komninou, J. Kioseoglou, N. Florini, E. Hulicius
    Effect of the Lower and Upper Interfaces on the Quality of InAs/GaAs Quantum Dots
    Applied Surface Science 301 (2014) 173-177.
  4. K. Rubešová, T. Hlásek, V. Jakeš, P. Matějka, J. Oswald, P. Holzhauser
    Ytterbium and erbium derivatives of 2-methoxyethanol and their use in the thin film deposition of Er-doped Yb3Al5O12
    Journal of Sol-Gel Science and Technology 70 (2014) 142-148.
  5. M.P. Mikhailova, E.V. Ivanov, L.V. Danilov, A.A. Petukhov, K.V. Kalinina, S.I. Slobozhanyuk, G.G. Zegrya, N.D. Stoyanov, Yu.P. Yakovlev, A. Hospodková, J. Pangrác, J. Oswald, M. Slavická Zíková, E. Hulicius
    Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1-xSbx/AlSb deep quantum well
    Journal of Applied Physics 115 (2014) 223102(1)-223102(5).
  6. A. Macková, P. Malinský, H. Pupíková, P. Nekvindová, J. Cajzl, Z. Sofer, R.A. Wilhelm, A. Kolitsch, J. Oswald
    The structural changes and optical properties of LiNbO3 after Er implantation using high ion fluencies.
    Nuclear Instruments and Methods in Physics Research Section B 332 (2014) 74-79.
  7. A. Macková, P. Malinský, H. Pupiková, P. Nekvindová, J. Cajzl, B. Švecová, J. Oswald, R.A. Wilhelm, A. Kolitsch
    A comparison of the structural changes and optical properties of LiNbO3,Al2O3 and ZnO after Er+ ion implantation
    Nuclear Instruments and Methods in Physics Research Section B 331 (2014) 182-186.
  8. A. Hospodková, M. Nikl, O. Pacherová, J. Oswald, P. Brůža, D. Pánek, B. Foltynski, E. Hulicius, A. Beitlerová, M. Heuken
    InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study
    Nanotechnology 25 (2014) 455501-1-455501-6.
  9. V. Novák, J. Hirschinger, F.-J. Niedernostheide, W. Prettl, M. Cukr, J. Oswald
    Direct experimental observation of the Hall angle in the low-temperature breakdown regime of n-GaAs
    Physical Review B 58 (1998) 13099-13102.