Electric charge transport in heterostructures with copper halides

The project deals with the preparation and theoretical study of optically transparent semiconductor heterojunctions based on copper halides, especially CuI and CuBr, which are direct band gap p-type semiconductors characterized by high hole mobility compared to known p-type oxides, and n-type metal oxides. Zinc oxide is a good candidate for creating such heterostructures with a broad application potential in optoelectronics. Particular attention will be devoted to the heterostructure formed on ZnO nanorods. The transfer of electric charge at the interface of these heterostructures will be studied. An integral part of the project is a detailed study of the influence of structural defects (iodine and copper vacancies) and dopants on changes in the band structure, reflected in electron transport phenomena. The final part of the project focuses on increasing the environmental stability of halides and the preparation of functional structures, such as transparent diodes, sensors, and thin-film transistors, using knowledge gained during the research of heterostructures.