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The aim of this work was to find correlation between In concentration, threading dislocations (TDs) density and the V-pit formation. It was shown that in our samples, the density of V-pits in the epilayer matched the TD density with a screw component in the substrate. Pure edge TDs do not affect the V-pit density. The In concentration influences the size of the V-pits, but not their density.
Description
Simplified scheme of V-pit (left) and AFM images of samples with InGaN layers prepared by the same technology but on bufferes with different dislocation density (right). In higher dislocation density sample agglomeration of V-pits into chains can be observed.