| Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface |
A. Hospodková, F. Hájek, T. Hubáček, Z. Gedeonová, P. Hubík, M. Hývl, J. Pangrác, F. Dominec, T. Košutová |
| Relation between Ga vacancies, photoluminescence, and growth conditions of MOVPE-prepared GaN layers |
A. Hospodková, J. Čížek, F. Hájek, T. Hubáček, J. Pangrác, F. Dominec, K. Kuldová, J. Batysta, M.O. Liedke, E. Hirschmann, M. Butterling, A. Wagner |
| V-pits formation in InGaN/GaN: influence of threading dislocations and indium content |
J. Stránská Matějová, A. Hospodková, T. Košutová, T. Hubáček, M. Hývl, V. Holý |
| Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design |
F. Hájek, A. Hospodková, P. Hubík, Z. Gedeonová, T. Hubáček, J. Pangrác, K. Kuldová |
| A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures |
A. Hospodková, F. Hájek, J. Pangrác, M. Slavická Zíková, T. Hubáček, K. Kuldová, J. Oswald, T. Vaněk, A. Vetushka, J. Čížek, M.O. Liedke, M. Butterling, A. Wagner |
| Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs |
T. Hubáček, A. Hospodková, K. Kuldová, J. Oswald, J. Pangrác, V. Jarý, F. Dominec, M. Slavická Zíková, F. Hájek, E. Hulicius, A. Vetushka, G. Ledoux, Ch. Dujardin, M. Nikl |
| InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties |
A. Hospodková, T. Hubácek, J. Oswald, J. Pangrác, K. Kuldová, M. Hývl, F. Dominec, G. Ledoux, Ch. Dujardin |
| GaAsSb-capped InAs QD type-II solar cell structures — improvement by composition profiling of layers surrounding QD |
A. Hospodková, J. Vyskočil, M. Zíková, J. Oswald, J. Pangrác, O. Petříček |
| InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study |
A. Hospodková, M. Nikl, O. Pacherová, J. Oswald, P. Brůža, D. Pánek, B. Foltynski, E. Hulicius, A. Beitlerová, M. Heuken |
| Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition |
A. Hospodková, M. Slavická Zíková, J. Pangrác, J. Oswald, J. Kubištová, K. Kuldová, P. Hazdra, E. Hulicius |
| Optimisation of InAs Quantum Dot Preparation |
A. Hospodková, J. Vyskočil, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová |
