Dr. Ing. Karla Kuldová

Karla Kuldová

Category

Scientist

Division (no.)

Division of Solid State Physics (3)

Department (no.)

Department of Semiconductors (14)

Laboratory / Scientific group

Group of Optical Spectroscopy (1408)

Telephone

+420 220 318 431, +420 220 318 409

E-mail

kuldova [at] fzu.cz

Locality

Cukrovarnická

Room

A 2

A 44/1

Thickness dependent interplay between trion binding energy and electron density in CVD-grown MoS2

Phys. Scr. 100 125947.jpg

Room temperature excitonic coupling in self-assembled copper–Fullerene hybrid films exposed to ambient air

4-5_Room temperature excitonic coupling_UPRAVENO.png

Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping

Dep14_YB PL vs doping.png

Relation between Ga vacancies, photoluminescence, and growth conditions of MOVPE-prepared GaN layers

Dep14_Vacancy in GaN.png

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Schema struktury HEMT

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

GaN lattice structure with Ga vacancy

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties

pssB 255 2018 1700464

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

Dep14_QD InAs_GaAsSb.png

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