Precursor gas composition optimisation for large area boron doped nano-crystalline diamond growth by MW-LA-PECVD


This article presents careful optimisation of the gas composition for preparation of boron doped nano-crystalline diamond layers using microwave plasma enhanced linear antenna chemical vapour deposition apparatus. By radically increasing the B content and careful consideration of the O content in the gas phase, boron doped diamond layers were prepared over large areas with high boron concentrations and electrical conductivity levels akin to boron doped diamond layers prepared in conventional MW PECVD systems with electrochemical properties suitable for industrial applications.



Picture (left) of boron-doped nanocrystalline diamond coated fused quartz 6-inch wafer (right) and electrical conductivity map.

Contact person: Andrew Taylor, +420 266 052 634, taylor [at] fzu [dot] cz

Cooperating institutions:

  • Czech Technical University, Faculty of Biomedical Engineering, Kladno, Czech Republic
  • J. Heyrovský Institute of Physical Chemistry of the Czech Academy of Sciences, Prague, Czech Republic
  • Research Centre Řež, Husinec-Řež, Czech Republic
  • Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), CNRS, Toulouse, France