This article presents a notable advancement in the development of ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers, relevant for high-temperature and high-power electronic applications. Using refractory metals (Ti, Mo, Zr) with Au overlayers, the study demonstrates that low specific contact resistance values (as low as 1 × 10⁻⁶ Ω·cm²) can be achieved—comparable to or better than conventional {100} oriented diamond.
The significance lies in confirming that the {113} orientation, which offers smoother surfaces and better doping capabilities, is a viable and even superior platform for diamond-based electronics. The research shows that Ti/Au contacts are stable across annealing temperatures, while Mo/Au and Zr/Au require post-deposition annealing (≥700 °C) to reach optimal performance on highly boron-doped layers (~10²¹ cm⁻³). These findings highlight the potential of Mo and Zr as improved alternatives to Ti for fabricating reliable ohmic contacts in high-performance diamond devices.