Low temperature synthesis of transparent conductive boron doped diamond films for optoelectronic applications: Role of hydrogen on the electrical properties

Authors

P. Ashcheulov, A. Taylor, Z. Vlčková Živcová, P. Hubík, J. Honolka, M. Vondráček, M. Remzová, J. Kopeček, L. Klimša, J. Lorinčik, M. Davydova, Z. Remeš, M. Kohout, A.M. Beltran, V. Mortet

Laboratory / Department
Advanced doped diamond materials (AD2M)
Citation
Citace
DOI
10.1016/j.apmt.2020.100633
Year
2020

This article explores methods to improve the electrical properties of nanocrystalline BDD films grown at low temperatures via chemical vapor deposition (CVD). The novelty lies in demonstrating that post-growth treatment enhances the electrical performance of these films, overcoming limitations imposed by low deposition temperatures. Additionally, the integration of a conductive titanium (Ti) grid enables the fabrication of highly transparent and conductive large-area nanocrystalline BDD electrodes at 250°C. 

MNB_Ashcheulov_1B.jpg
(a) Rezistivita borem dopovaného nanokrystalického diamantu vypěstovaného při různých teplotách a (b) fotografie transparentní vodivé elektrody na bázi BDD a Ti-grid.