Solar energy conversion technologies are constantly evolving, with researchers seeking ways to improve efficiency and stability. One promising area of research involves the use of III-V semiconductors, which have shown excellent potential for solar-to-electricity and solar-to-fuel conversion. However, these materials are susceptible to degradation in photoelectrochemical (PEC) cells, requiring protective layers for long-term stability. This study explores the use of gallium nitride (GaN) as a protective layer for GaInP. In collaboration with our colleagues from Technical University in Ilmenau, we investigated the band alignment between GaN and GaInP, a crucial factor in determining the efficiency of charge carrier transport and the overall stability of the device. The study confirmed that GaN is a promising candidate for use in PEC cells, potentially leading to more efficient and durable solar energy conversion technologies.
