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Molecular beam epitaxy system equipped with one growth chambers, one UHV preparation chamber including connection for a vacuum suitcase and a loadlock chamber with capacity for eight two-inch wafers or flag style sample plates. Sample growth can be performed in the temperature range 77–1273 K and in-situ followed using reflection high-energy electron diffraction.
The system is designed for growth of superlattices based on two-dimensional layered transition metal chalcogenides, and other layered materials containing Mo, S, Co, Fe, Mn, Sn, Gd, O.
Description
System for molecular beam epitaxy, type Octoplus 350