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Ultrathin films of HfO2 become ferroelectric although bulk crystals are paraelectric. In this review we describe how grain size, thermal stress, dopants, oxygen vacancies, film thickness, annealing process and electrodes influence dielectric properties of HfO2, which are important for applications in high-density resistive random access memories and ferroelectric memories. We also discuss how to achieve superlative performance with high-speed reliable switching, excellent endurance and retention.
Description
Dependence of crystal structure of HfO2 on the thin film thickness, strain and electrodes.
Contact person: Stanislav Kamba