Ing. Tomáš Vaněk, a Ph.D. student at the Technical University of Liberec and the Department of Semiconductors of the FZU, has received an award for an outstanding student poster at the International Conference on Crystal Growth and Epitaxy, which was held together with the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy in Keystone, Colorado, USA.
As part of his Ph.D. studies, Tomáš Vaněk focuses on MOVPE grown nitride semiconductor structures and their characteristics. He presented a poster called Luminescence red shift of InGaN/GaN heterostructures by enlargement of V-pits, which discussed the phenomena and challenges that arise in the growth of gallium nitride heterostructures with thick active regions that are formed by InGaN / GaN quantum wells. In his research, he collaborated with other colleagues from the TUL and the FZU CAS.
The conference and workshop were focused on the latest discoveries in the area of crystal growth, epitaxy, characterization and applications. The main points of the programme included symposia on 2D electronic materials, epitaxy of complex oxides, ferroelectric crystals and structured ceramics.