New material for 5G mobile networks

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Stanislav Kamba, Veronica Goian and Christelle Kadlec, in collaboration with Prof. D. G. Schlom from the Cornell University and other American and German colleagues, succeeded in developing a new material for mobile network of the 5th generation.

Epitaxial strained thin films of (SrTiO3)n-1(BaTiO3)1SrO were grown on DyScO3 substrates using molecular beam epitaxy. The best microwave dielectric properties were discovered in samples with n = 6. Permittivity exhibits huge tuning using electric field and microwave dielectric loss is anomalously low. Unique properties were confirmed using first-principles calculations and by experimental observation of the soft mode behavior in THz region. These films are ideal for components in 5G networks. See you more details in Nat. Mater. (2020).

Schema of crystal structures of investigated films
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Schema of crystal structures of investigated (SrTiO3)n-1(BaTiO3)1SrO films and their view in scanning transmission electron microscope. Yellow octahedra depict TiO6 layers, green and red points mark atoms of Sr and Ba.

 Contact person: Stnaislav Kamba


N.M. Dawley, E.J.Marksz, A.M. Hagerstrom, G.H. Olsen, M.E. Holtz, V. Goian, C. Kadlec, J. Zhang, X. Lu, J.A. Drisko, R. Uecker, S. Ganschow, C.J. Long, J.C. Booth, S. Kamba, C.J. Fennie, D.A. Muller, N.D. Orloff and D.G. Schlom, Nature Materials 19, 176 (2020).

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